 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PHOTODIODE Si PIN photodiode S2721-02, S3096-02, S4204, S8703 Dual-element, plastic package photodiode S2721-02, S3096-02, S4204 and S8703 are dual-element Si PIN photodiodes molded into small plastic packages. Having high sensitivity and low noise, these photodiodes have very low cross-talk between the elements. Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs. Please feel free to contact our sales office. Features Applications l High sensitivity l Uniform element sensitivity l Low cross-talk l Low noise l CD, DVD, MO (Magneto-Optical disc) signal pickups l Laser beam alignment l Various position detection applications s General ratings / Absolute maximum ratings Dimensional outline Active area (mm) 1 x 3 / 2 elements 1.2 x 3 / 2 elements 1 x 2 / 2 elements Element gap (m) 5 30 20 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (C) (C) 20 -25 to +85 -40 to +100 Type No. S2721-02 S3096-02 S4204 S8703 s Electrical and optical characteristics (Typ. Ta=25 C, unless otherwise noted, per 1 element) Spectral response range Peak sensitivity wavelength p Dark current ID VR=10 V all elements Typ. (nA) 0.1 0.05 0.1 Max. (nA) 2.0 0.5 1.0 Temp. coefficient of ID TCID (times/C) 1.15 Cut-off frequency fc VR=10 V RL=50 =780 nm -3 dB (MHz) 50 25 30 Terminal capacitance Ct VR=10 V f=1 MHz (pF) 5 3 Type No. Photo sensitivity =p NEP VR=10 V S2721-02 S3096-02 S4204 S8703 (nm) 320 to 1060 320 to 1100 (nm) 900 960 (A/W) 0.56 0.58 0.65 (W/Hz1/2) 6.4 x 10-15 7.2 x 10-15 8.7 x 10-15 1 Si PIN photodiode s Spectral response 0.7 0.6 S2721-02, S3096-02, S4204, S8703 s Photo sensitivity temperature characteristics (Typ. Ta=25 C) +1.5 (Typ.) TEMPERATURE COEFFICIENT (%/C) S3096-02 PHOTO SENSITIVITY (A/W) 0.5 S4204, S8703 0.4 0.3 0.2 0.1 0 200 S2721-02 +1.0 S2721-02 +0.5 0 S3096-02, S4204 S8703 -0.5 200 400 600 800 1000 400 600 800 1000 WAVELENGTH (nm) KMPDB0134EB WAVELENGTH (nm) KMPDB0135EC s Dark current vs. reverse voltage 1 nA (Typ. Ta=25 C) s Terminal capacitance vs. reverse voltage 100 pF (Typ. Ta=25 C, f=1 MHz) 100 pA S3096-02 TERMINAL CAPACITANCE S4204, S8703 DARK CURRENT S2721-02 S2721-02 10 pF S3096-02 10 pA S4204, S8703 1 pA 0.01 0.1 1 10 100 1 pF 0.1 1 10 100 REVERSE VOLTAGE (V) KMPDB0136EB REVERSE VOLTAGE (V) KMPDB0137EB 2 Si PIN photodiode S2721-02, S3096-02, S4204, S8703 s Dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1) S2721-02 4.6 0.2 (INCLUDING BURR) ACTIVE AREA 0.7 0.5 S3096-02 5.0 0.2 (INCLUDING BURR) 0.6 0.5 4.7 * 4.1 0.2 (INCLUDING BURR) ACTIVE AREA 5.6 0.2 (INCLUDING BURR) 2.54 5.4 * 5.5 * 10 10 3 (0.8) 5.0 0.4 (1.0) (1.0) 4.5 * (0.8) 5.0 0.4 4.0 * 0.8 0.25 5.2 0.2 1.8 PHOTOSENSITIVE SURFACE a ab 0.7 0.5 0.03 5 0.25 PHOTOSENSITIVE SURFACE 1.0 3.0 14.5 0.3 10 5 2.0 0.005 1.0 DETAILS OF PHOTODIODE 5 4.5 0.3 b 3 7.5 5 1.2 DETAILS OF PHOTODIODE ANODE a CATHODE COMMON ANODE b CATHODE COMMON Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 KMPDA0119EA ANODE a CATHODE COMMON ANODE b CATHODE COMMON Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 KMPDA0118EA S4204 4.1 0.2 (INCLUDING BURR) ACTIVE AREA S8703 0.6 0.5 5.0 MAX. (INCLUDING BURR) 5.0 0.2 (INCLUDING BURR) 3.0 ACTIVE AREA 4.7 * 10 4.8 * 4.7 * 10 1.8 5 2.54 4.2 0.2 (INCLUDING BURR) 5 (0.8) 4.9 0.4 (1.25) (1.25) 4.0 * (0.8) 4.9 0.4 a (1.25) 4.0 * 4.8 * 2.54 4.9 0.25 0.02 0.5 2.0 0.5 2.0 DEPTH 0.15 MAX. 13.8 0.3 PHOTOSENSITIVE SURFACE 10 0.4 b 0.5 0.8 0.25 1.27 1.8 1.0 DETAILS OF PHOTODIODE Chip position accuracy with respect to the package dimensions marked * X, Y 0.2 2 1.27 (0.8) 0.8 0.25 5 ANODE a CATHODE COMMON ANODE b CATHODE COMMON 5.0 MAX. (INCLUDING BURR) 4.7 * 10 PHOTOSENSITIVE SURFACE a b 0.02 KMPDA0120EA 2.0 5 4.8 * DETAILS OF PHOTODIODE Shaded area indicates burr. Chip position accuracy with respect to the package dimensions marked * X, Y0.2 2 KMPDA0181EA ANODE a CATHODE COMMON ANODE b Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2003 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KMPD1039E03 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 1.0 Dec. 2003 DN 3 |
Price & Availability of S3096-02
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |